概述
数据手册2N4393 概述
SINGLE N-CHANNEL JFET SWITCH 单N沟道JFET开关
2N4393 数据手册
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PDF下载2N/PN/SST4391
SERIES
SINGLE N-CHANNEL JFET SWITCH
Linear Integrated Systems
FEATURES
Replacement for Siliconix 2N/PN/SST4391, 4292, & 4393
LOW ON RESISTANCE
FAST SWITCHING
rDS(on) ≤ 30Ω
tON ≤ 15ns
2N SERIES
PN SERIES SST SERIES
ABSOLUTE MAXIMUM RATINGS1
@ 25 °C (unless otherwise stated)
Maximum Temperatures
TO-18
TO-92
SOT-23
BOTTOM VIEW
BOTTOM VIEW
TOP VIEW
1
3
2
D
S
D
S
2
1
3
G
G
D
1
S
2
G
3
Storage Temperature (2N)
-65 to 200°C
-55 to 150°C
-55 to 200°C
-55 to 150°C
Storage Temperature (PN/SST)
Junction Operating Temperature (2N)
Junction Operating Temperature (PN/SST)
Maximum Power Dissipation
Continuous Power Dissipation (2N)
Continuous Power Dissipation (PN/SST)
Maximum Currents
1800mW
350mW
Gate Current
50mA
Maximum Voltages
Gate to Drain or Source (2N/PN)
Gate to Drain or Source (SST)
-40V
-35V
STATIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
4391
4392
4393
SYM.
CHARACTERISTIC
TYP
UNIT CONDITIONS
MIN MAX MIN MAX MIN MAX
2N/PN
SST
2N/PN
SST
-40
-35
-4
-40
-35
-2
-40
-35
-0.5
-0.5
Gate to Source
BVGSS
IG = -1µA, VDS = 0V
Breakdown Voltage
-10
-10
1
-5
-5
1
-3
-3
1
VDS = 20V, ID = 1nA
VDS = 15V, ID = 10nA
IG = 1mA, VDS = 0V
VGS = 0V, ID = 3mA
VGS = 0V, ID = 6mA
VGS = 0V, ID = 12mA
Gate to Source
Cutoff Voltage
VGS(off)
VGS(F)
-4
-2
V
Gate to Source Forward Voltage
0.7
0.25
0.3
0.4
VDS(on) Drain to Source On Voltage
0.4
0.35
0.4
150
100
2N
PN
SST
2N/SST
PN
50
50
50
25
25
25
75
100
5
5
5
30
60
Drain to Source
IDSS
mA
pA
VDS = 20V, VGS = 0V
Saturation Current2
-5
-5
-5
-100
-1000
-100
-1000
-100
-1000
IGSS
IG
Gate Leakage Current
Gate Operating Current
VGS = -20V, VDS = 0V
VDG = 15V, ID = 10mA
Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
STATIC ELECTRICAL CHARACTERISTICS CONT. @25 °C (unless otherwise stated)
4391
4392
4393
SYM.
CHARACTERISTIC
TYP
UNIT CONDITIONS
MIN MAX MIN MAX MIN MAX
5
5
5
5
5
5
5
100
VDS = 20V, VGS = -5V
2N
100
VDS = 20V, VGS = -7V
VDS = 20V, VGS = -12V
VDS = 20V, VGS = -5V
VDS = 20V, VGS = -7V
VDS = 20V, VGS = -12V
100
ID(off)
Drain Cutoff Current
pA
1000
1000
1000
PN
SST
100
30
100
60
100
100
VDS = 10V, VGS = -10V
Ω
rDS(on)
Drain to Source On Resistance
VGS = 0V, ID = 1mA
DYNAMIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
4391
4392
4393
SYM.
CHARACTERISTIC
TYP
UNIT CONDITIONS
MIN MAX MIN MAX MIN MAX
gfs
gos
Forward Transconductance
Output Conductance
6
25
mS
µS
V
DS = 20V, ID = 1mA
f = 1kHz
VGS = 0V, ID = 0A
rds(on)
Drain to Source On Resistance
30
60
100
Ω
f = 1kHz
2N
12
12
13
14
16
14
16
14
16
VDS = 20V, VGS = 0V
Ciss
Input Capacitance
PN
SST
2N
PN
SST
2N
PN
SST
2N
PN
SST
f = 1MHz
3.3
3.5
3.6
3.2
3.4
3.5
2.8
3.0
3.1
3.5
5
VDS = 0V, VGS = -5V
f = 1MHz
pF
3.5
5
Reverse Transfer
Capacitance
VDS = 0V, VGS = -7V
Crss
f = 1MHz
3.5
5
V
DS = 0V, VGS = -12V
f = 1MHz
VDS = 10V, ID = 10mA
nV/√Hz
en
Equivalent Input Noise Voltage
3
f = 1kHz
SWITCHING ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
4391
4392
4393
SYM.
td(on)
tr
CHARACTERISTIC
TYP
UNIT CONDITIONS
MIN MAX MIN MAX MIN MAX
2N/PN
SST
2N/PN
SST
2N/PN
SST
2N/PN
SST
2
2
2
2
6
6
13
13
15
5
15
5
15
5
Turn On Time
ns
VDD = 10V, VGS(H) = 0V
20
15
35
20
50
30
td(off)
tf
Turn Off Time
Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
SWITCHING CIRCUIT CHARACTERISTICS
SWITCHING TEST CIRCUIT
VDD
SYM.
VGS(L)
RL
4391
-12V
800Ω
12mA
4392
-7V
1600Ω
6mA
4393
-5V
3200Ω
3mA
RL
VGS(H)
VGS(L)
ID(on)
OUT
1k
Ω
Ω
51Ω
51
TO-92
SOT-23
TO-18
Three Lead
0.175
0.195
0.130
0.155
0.89
1.03
0.230
0.209
0.37
0.51
DIA.
0.045
0.060
1
3
2
0.195
0.175
DIA.
1.78
2.05
LS XXX
YYWW
2.80
3.04
0.170
0.195
0.030
MAX.
0.150
0.115
1.20
1.40
2.10
2.64
3 LEADS
0.500 MIN.
0.050
0.89
1.12
0.019
0.016
DIA.
0.014
0.020
0.016
0.022
0.500
0.610
0.085
0.180
0.100
0.013
0.100
0.55
2
1
2
3
DIMENSIONS IN
MILLIMETERS
1
3
0.095
0.105
0.045
0.055
DIMENSIONS
IN INCHES.
45°
0.046
0.036
0.048
0.028
NOTES
1. Absolute maximum ratings are limiting values above which serviceability may be impaired.
2. Pulse test: PW ≤ 300µs, Duty Cycle ≤ 3%
Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its
use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Linear Integrated Systems.
Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
2N4393 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| 2N4393C1 | SEME-LAB | SILICON SMALL SIGNAL N-CHANNEL JFET | 获取价格 |
|
| 2N4393CSM | SEME-LAB | SMALL SIGNAL N.CHANNEL J.FET IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS | 获取价格 |
|
| 2N4393CSM_05 | SEME-LAB | SMALL SIGNAL N–CHANNEL J–FET IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS | 获取价格 |
|
| 2N4393DCSM | SAMES | SMALL SIGNAL DUAL N-CHANNEL J-FET IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS | 获取价格 |
|
| 2N4393DCSM | SEME-LAB | SMALL SIGNAL DUAL | 获取价格 |
|
| 2N4393_TO-18 | MICROSS | Single N-Channel JFET switch | 获取价格 |
|
| 2N4395 | ETC | TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 5A I(C) | TO-3 | 获取价格 |
|
| 2N4396 | ETC | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | TO-3 | 获取价格 |
|
| 2N4397 | ETC | NPN | 获取价格 |
|
| 2N4398 | MOSPEC | POWER TRANSISTORS(200W) | 获取价格 |
|
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